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Theoretical Investigation of Hydrogenated Silicon Nanocrystals:Size,Shape,and Surface Reconstruction  
Theoretical Investigation of Hydrogenated Silicon Nanocrystals:Size,Shape,and Surface Reconstruction
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所属学科: 分子表征
来源: 第六届亚欧研讨会上处理和性能增强聚合物会议文集(2013.6.2-6 武汉)
简介:
(1DepartmentofPhysics,SouthChinaUniversityofTechnology,Guangzhou510640,China;2StateKeyLaboratoryofLuminescentMaterialsandDevices,SouthChinaUniversityofTechnology,Guangzhou510640,China;3NanostructureInstituteforEnergyandEnvironmentalResearch,DivisionofPhysicalSciences,SouthUniversityofScienceandTechnologyofChina,Shenzhen518055,China;4TheoreticalChemistry,ChemicalCentre,P.O.Box124,S-22100Lund,Sweden)Bymodelanalysisandthefirst-principlescalculations,wehaveperformedasystematicinvestigationofhydrogenatedsiliconnanocrystals(H-SiNCs)withvarioussize,shape,andsurfacereconstruction.WedemonstratedthatH-SiNCswiththesmallestH/Siratioareenclosedby(lll)facetsbeforereconstruction,andtwotypicalsurfacereconstructionswilldramaticallydecreasetheH/Siratio,involvingdimersandstepson(lOO)and(lll)facets,respectively.Withthefirst-principlescalculations,wedeterminedthestableH-SiNCs(upt0200Siatoms)andfoundthatthesurfacemorphologiesvarywiththesizeandhydrogenchemicalpotential.Inaddition,wealsostudiedtheelectronicpropertiesofH-SiNCsfocusedonthegapvariationsandchargedistributionsasafunctionofsize,shape,andsurfacereconstruction.ThedimerandstepreconstructionsnotonlybringsignificantdecrementofthegapvaluesandtheH/Siratio,butalsomodulatethechargedistributionsandinducethespatialseparationofnear-gaplevels.
作者: H. Lu , Y. J. 2hao , X. B. Yang , H. Xu,J. Forsman
上传时间: 2013-07-04 14:41:24
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