writer：Zhang, Liu Xing，Zhang, Yong Cai，Zhang, Ming
keywords：Nanomaterials, Semiconductors, Crystal Growth, X-ray techniques
source：期刊
specific source：Materials Letters
Issue time：2010年
Two routes have been proposed for the synthesis of In₂O₃ powders from InCl₃?4H₂O and thiourea. One route involved a two-step procedure (that is, firstly, In₂S₃ clusters constructed with mainly nanoflakes were synthesized by heating the mixture of InCl₃?4H₂O and thiourea in air from room temperature to 200 °C, coupled with a subsequent washing treatment; secondly, In₂O₃ was obtained by calcining the In₂S₃ clusters in air at 600 °C for 6 h), and the other route was a one-step procedure (that is, In₂O₃ was synthesized directly by calcining the mixture of InCl₃?4H₂O and thiourea in air at 600 °C for 6 h). The resultant products were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electronic microscope and room temperature photoluminescence (RT-PL) spectra. It was observed that the In₂O₃ nanocrystals obtained via the two-step procedure exhibited PL peaks at about 453 and 471 nm, corresponding to the defeat-related emission; while the In₂O₃ submicron polyhedral crystals obtained via the one-step procedure and In₂O₃pyramids obtained by calcining the only InCl₃?4H₂O in air at 600 °C for 6 h displayed a PL band centered at around 338 nm, corresponding to the band edge emission.